| 摘要 |
PROBLEM TO BE SOLVED: To suppress write-in errors in a semiconductor device in which write-in voltage is generated using a charge pump.SOLUTION: An output of a charge pump circuit is connected to a first node. A load current application circuit supplies a load current to the first node during a test period, and stops supply of the load current after finish of the test period. Voltage of the first node is write-in voltage. A memory circuit stops application of write-in voltage to the memory cell during the test period, and applies wrote-in voltage to the memory cell after finish of the test period. A high voltage detection unit compares the write-in voltage with the prescribed voltage. If the write-in voltage does not reach the prescribed voltage at the time of finish of the test period, the high voltage detection unit activates a disable signal. When the disable signal is activated, the charge pump circuit stops boosting operation, in the case other than the above, the charge pump circuit continues boosting operation. |
