| 摘要 |
PROBLEM TO BE SOLVED: To provide a data alignment circuit of a semiconductor memory device, which increases area efficiency and ease of design; and to provide a method thereof.SOLUTION: The data alignment circuit of the semiconductor memory device includes: a data strobe clock phase control part configured to control a phase of a data strobe clock according to a strobe delay code and generate a delayed strobe clock; a plurality of data phase control parts configured to control phases of input data according to respective data delay codes and generate respective delayed data; a plurality of data alignment parts configured to latch the respective delayed data according to the delayed strobe clock and generate respective latch data and alignment data; and a delay code generation part configured to perform an operation of determining a plurality of phases of the latch data and generate the strobe delay code and the plurality of the data delay codes. |
