| 发明名称 |
SEMICONDUCTOR DEVICE HAVING INTERNAL GATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a main gate formed on a semiconductor substrate and a source region and a drain region formed in a surface of the semiconductor substrate on opposite sides of the main gate. An internal gate formed within a portion of the main gate that adjoins the source region.
|
| 申请公布号 |
US2010207196(A1) |
申请公布日期 |
2010.08.19 |
| 申请号 |
US20090411536 |
申请日期 |
2009.03.26 |
| 申请人 |
SHIN MIN JUNG;KIM SEONG HWAN |
发明人 |
SHIN MIN JUNG;KIM SEONG HWAN |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
