| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which forms an inductor exhibiting a high Q-value by eliminating a silicon substrate directly under the inductor and to provide a method for manufacturing the same. Ž<P>SOLUTION: The method for manufacturing the semiconductor device includes: a process for forming an element isolation film 4 on a semiconductor substrate; a process for forming a gate insulating film on the surface of the semiconductor substrate; a process for forming gate electrodes 7 on the gate insulating film; a process for forming an insulating film 8 on the gate electrodes 7, the element isolation film 4 and the semiconductor substrate; a process for forming the inductor 13a on the insulating film 8; and a process for eliminating the semiconductor substrate which is positioned directly under the inductor. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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