| 摘要 |
PURPOSE: The metal line of a semiconductor device and a method for fabricating the same are provided to prevent the electro-migration phenomenon by adding titanium film into a diffusion barrier layer which is formed on a copper line. CONSTITUTION: An insulating film is formed on a substrate(100). A via-hole and a trench(121) which is connected with the via-hole are formed in the insulating film. A first titanium film is formed on the entire surface of the substrate on which the via-hole and the trench are formed. A barrier film is formed on the first titanium film. A copper film(140) is formed in the via-hole and the trench including the barrier film. A second titanium film is formed on the copper film.
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