发明名称 |
FILM FORMING METHOD AND FILM FORMING APPARATUS |
摘要 |
On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated.
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申请公布号 |
US2010140802(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20090631556 |
申请日期 |
2009.12.04 |
申请人 |
TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY |
发明人 |
MATSUMOTO KENJI;ITOH HITOSHI;NEISHI KOJI;KOIKE JUNICHI |
分类号 |
H01L23/52;H01L21/443 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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