发明名称 FILM FORMING METHOD AND FILM FORMING APPARATUS
摘要 On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated.
申请公布号 US2010140802(A1) 申请公布日期 2010.06.10
申请号 US20090631556 申请日期 2009.12.04
申请人 TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY 发明人 MATSUMOTO KENJI;ITOH HITOSHI;NEISHI KOJI;KOIKE JUNICHI
分类号 H01L23/52;H01L21/443 主分类号 H01L23/52
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