NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THEREOF

摘要

PURPOSE: A non-volatile semiconductor memory device and a method of manufacturing thereof are provided to retention stored data even if power supply is suspended by using a device having capacitor less DRAM and TRRAM(Transparent Resistive Random Access Memory) which are built therein. CONSTITUTION: A nonvolatile semiconductor memory device comprises a substrate(100), a metal layer(110), an oxide layer(115), a floating body cell(120), a source electrode(123), a drain electrode(125), a gate isolation layer(133), and a gate electrode(130). The metal layer is formed on the substrate. The oxide layer is formed on the metal layer. The oxide layer comprises the transparent resistive material. The transparent resistive material has a resistance which is varied according to an electrical signal.