发明名称
摘要 Isolation structures for isolating semiconductor devices from a substrate include floor isolation regions buried within the substrate and one or more trenches extending from a surface of the substrate to the buried floor isolation region.
申请公布号 JP2009539260(A) 申请公布日期 2009.11.12
申请号 JP20090513252 申请日期 2007.05.30
申请人 发明人
分类号 H01L21/76;H01L21/8234;H01L27/06;H01L27/08 主分类号 H01L21/76
代理机构 代理人
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