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发明名称
摘要
Isolation structures for isolating semiconductor devices from a substrate include floor isolation regions buried within the substrate and one or more trenches extending from a surface of the substrate to the buried floor isolation region.
申请公布号
JP2009539260(A)
申请公布日期
2009.11.12
申请号
JP20090513252
申请日期
2007.05.30
申请人
发明人
分类号
H01L21/76;H01L21/8234;H01L27/06;H01L27/08
主分类号
H01L21/76
代理机构
代理人
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