发明名称 Material Assisted Laser Ablation
摘要 This invention provides photoablation-based processing techniques and materials strategies for making, assembling and integrating patterns of materials for the fabrication of electronic, optical and opto-electronic devices. Processing techniques of the present invention enable high resolution and/or large area patterning and integration of porous and/or nano- or micro-structured materials comprising active or passive components of a range of electronic devices, including integrated circuits (IC), microelectronic and macroelectronic systems, microfluidic devices, biomedical devices, sensing devices and device arrays, and nano- and microelectromechanical systems.
申请公布号 US2009239042(A1) 申请公布日期 2009.09.24
申请号 US20080052980 申请日期 2008.03.21
申请人 JAIN KANTI;CHAE JUNGHUN 发明人 JAIN KANTI;CHAE JUNGHUN
分类号 B32B3/10;B05D5/12;B29C35/08;C23C16/453;C23C16/50;G03F7/20 主分类号 B32B3/10
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