发明名称 FLASH MEMORY DEVICE INCLUDING A DUMMY CELL
摘要 A non-volatile memory device includes a selection transistor coupled to a bit line. The device also includes a plurality of memory cells serially coupled to the selection transistor and at least one dummy cell located between the plurality of memory cells. The dummy cell is turned off during a programming operation of a memory cell located between the dummy cell and the selection transistor.
申请公布号 US2009180317(A1) 申请公布日期 2009.07.16
申请号 US20090416477 申请日期 2009.04.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG HEE-SOO;CHOI DONG-UK;LEE CHOONG-HO;KANG SANG-GU
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
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