发明名称 |
FLASH MEMORY DEVICE INCLUDING A DUMMY CELL |
摘要 |
A non-volatile memory device includes a selection transistor coupled to a bit line. The device also includes a plurality of memory cells serially coupled to the selection transistor and at least one dummy cell located between the plurality of memory cells. The dummy cell is turned off during a programming operation of a memory cell located between the dummy cell and the selection transistor.
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申请公布号 |
US2009180317(A1) |
申请公布日期 |
2009.07.16 |
申请号 |
US20090416477 |
申请日期 |
2009.04.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG HEE-SOO;CHOI DONG-UK;LEE CHOONG-HO;KANG SANG-GU |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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