| 摘要 |
A manufacturing method of a semiconductor device is provided to minimize damage to an interlayer insulation film by reducing an electrical-chemical stress applied to the interlayer insulation film during a flattening process. An interlayer insulation film(105) is formed on a semiconductor substrate(101). A damascene pattern(107) is formed on the interlayer insulation film by etching the interlayer insulation film. A conductive film(113a) is formed on the interlayer insulation film in order to fill the damascene pattern. A flattening process is performed by applying a voltage of a pulse type in order to leave the conductive film inside the damascene pattern. In the flattening process, an electrochemical-mechanical polishing method is used. The voltage of the pulse type of 0.5V and 2.5V is repetitively applied.
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