| 摘要 |
The present invention provides a versatile system for producing sense transistors having optimized thermal and parametric matching with an associated power transistor. A power transistor is formed, having a plurality of alternating source and drain structures, with a plurality of gate structures interposed there between. At a desired location within the power transistor-which may be in a central location, or symmetrically distributed-one or more sense transistors are formed from an isolated portion of either a drain or source structure.
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