| 摘要 |
<p>A method for forming a transistor of a saddle fin structure is provided to improve electric characteristics of a semiconductor device by securing a stable cell driving current characteristic in a cell transistor of 40nm and less. An active area is defined on a substrate(100) by an isolation layer. A first ion implantation process is performed to form a channel. A recessed trench is formed by etching selectively the active area of the substrate. The isolation layer is etched to protrude the active area having the recessed trench in a constant thickness. A second ion implantation process is performed to implant second ions for controlling locally a threshold voltage into a sidewall of the protruded active area. A gate electrode is formed to cover the protruded active area.</p> |
