MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS

摘要

A required number of wiring layers 32 are formed on a temporary substrate 31 of which thermal expansion coefficient differs from that of a semiconductor chip 38 by 2x10-6/° C. or less and a part of the wiring layer of the uppermost layer is exposed to an opening part of an insulating layer 36 of the uppermost layer as a pad 34 and a wiring substrate is fabricated and a solder bonding member of the semiconductor chip 38 is brought into contact with the pad 34 of the wiring substrate and reflow is performed and the semiconductor chip 38 is attached to the wiring substrate 36. Thereafter, an outer peripheral part of the attached semiconductor chip 38 is sealed while exposing an upper surface of the semiconductor chip and removing the temporary substrate 31 and then a terminal for external connection is formed on the wiring substrate.