| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate of an HOT structure sufficient for intrinsic practical use by suppressing the occurrence of the crystal-defect at the boundary between the crystal regions having different crystal orientations of a functional substrate when the semiconductor substrate of the HOT structure is manufactured using a DSB substrate. SOLUTION: In this semiconductor substrate comprising a silicon support substrate having a first crystal orientation, and a silicon functional substrate directly formed on this silicon support substrate and having a first crystal region having a crystal orientation different from the first crystal orientation of the silicon support substrate, and a second crystal region having a crystal orientation different from the first crystal orientation of the silicon support substrate, a trench reaching at least the main surface of the silicon support substrate is formed at the boundary between the first crystal region and the second crystal region of the silicon functional substrate. COPYRIGHT: (C)2009,JPO&INPIT
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