| 摘要 |
<p>A semiconductor device includes: a substrate region; a gate electrode, a source electrode, and a drain electrode which are placed on a first surface of the substrate regions; an active area between gate and source placed between the gate electrode and the source electrode; an active area between gate and drain placed between the gate electrode and the drain electrode; an active area placed on the substrate region of the underneath part of the gate electrode, the source electrode, and the drain electrode; and a non-active area placed adjoining the active area, the active area between gate and source, and the active area between gate and drain. Furthermore, width W A1 of the active area between gate and source is wider than width W A2 of the active area between gate and drain. Channel resistance of an active area between source and gate placed between a gate electrode and a source electrode is reduced, and high-frequency performance is provided.</p> |
