发明名称 Manufacture method for semiconductor device having concave portions filled with conductor containing Cu as its main composition
摘要 An insulating film having a concave portion is formed on a semiconductor substrate. The inner surface of the concave portion and the upper surface of the insulating film are covered with an auxiliary film made of Cu alloy containing a first metal element other than Cu. A conductive member containing Cu as a main composition is deposited on the auxiliary film, the conductive member being embedded in the concave portion. Heat treatment is performed in an atmosphere containing P compound, Si compound or B compound. With this method, a content of element other than Cu in the conductive member can be reduced and a resistivity can be lowered.
申请公布号 US7507666(B2) 申请公布日期 2009.03.24
申请号 US20050294471 申请日期 2005.12.06
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 NAKAO YOSHIYUKI;KITADA HIDEKI;OHTSUKA NOBUYUKI;SHIMIZU NORIYOSHI
分类号 H01L21/4763 主分类号 H01L21/4763
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