| 摘要 |
Systems with semiconductor devices that are DC-biased at either their weak inversion (i.e., sub-threshold) region or their strong inversion region. In a preferred embodiment using semiconductor devices (e.g., NMOS, PMOS, etc.), a gate to source voltage (Vgs) is slightly below the threshold voltage (Vtn) of the device. These weakly turned-on semiconductor devices increase the receiving AC sensitivity of an AM-Detector compared to that of a conventional AM-Detector without any DC-biasing. Further, the compensating bias voltage (Vbias) compensates for one or both of the ambient temperature change and the foundry's process variation of the various semiconductor devices.
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