发明名称 |
Method of fabricating strained-silicon transistors |
摘要 |
A method of fabricating strained-silicon transistors includes providing a semiconductor substrate, in which the semiconductor substrate includes a gate, at least a spacer, and a source/drain region; performing a first rapid thermal annealing (RTA) process; removing the spacer and forming a high tensile stress film over the surface of the gate and the source/drain region; and performing a second rapid thermal annealing process.
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申请公布号 |
US2007111416(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20050164177 |
申请日期 |
2005.11.14 |
申请人 |
HUANG CHENG-TUNG;LIANG CHIA-WEN;CHENG TZYY-MING;SHEN TZER-MIN;SHENG YI-CHUNG |
发明人 |
HUANG CHENG-TUNG;LIANG CHIA-WEN;CHENG TZYY-MING;SHEN TZER-MIN;SHENG YI-CHUNG |
分类号 |
H01L21/8234;H01L21/336;H01L21/425 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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