发明名称 METHOD OF FABRICATING A DEVICE WITH A CONCENTRATION GRADIENT AND THE CORRESPONDING DEVICE
摘要 A semiconductive device is fabricated by forming, within a semiconductive substrate, at least one continuous region formed of a material having a non-uniform composition in a direction substantially perpendicular to the thickness of the substrate.
申请公布号 US2008246121(A1) 申请公布日期 2008.10.09
申请号 US20080061403 申请日期 2008.04.02
申请人 STMICROELECTRONICS (CROLLES 2) SAS 发明人 BENSAHEL DANIEL-CAMILLE;MORAND YVES
分类号 H01L21/20;H01L29/41 主分类号 H01L21/20
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