ON-CHIP MEMORY CELL AND METHOD OF MANUFACTURING SAME

摘要

An on-chip memory cell comprises a tri-gate access transistor (145) and a tri-gate capacitor (155). The on-chip memory cell may be an embedded DRAM on a three-dimensional tri-gate transistor and capacitor structures which is fully compatible with existing tri-gate logic transistor fabrication process. Embodiments of the invention use the high fin aspect ratio and inherently superior surface area of the tri-gate transistors to replace the "trench" capacitor in a commodity DRAM with an inversion mode tri-gate capacitor. The tall sidewalls of the tri-gate transistor provide large enough surface area to provide storage capacitance in a small cell area.