GAN SEMICONDUCTOR ELEMENT

摘要

Provided is a GaN semiconductor element, which has a GaN semiconductor multilayer structure having a high withstand voltage and a low leakage. The GaN semiconductor element has a multilayer structure wherein a third n-type GaN semiconductor layer (3), a first n-type GaN semiconductor layer (4), an i-type GaN semiconductor layer (5), a p-type GaN semiconductor layer (6) and a second n-type GaN semiconductor layer (7) are stacked on a substrate (1).The impurity concentration of a p-type GaN semiconductor layer (6) is 1OE0<SUP>20</SUP>cm<SUP>-3</SUP> or less, and the impurity concentration of the first n-type GaN semiconductor layer (4) is 1OE0<SUP>18</SUP>cm<SUP>-3</SUP> or less.