| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing slurry capable of obtaining a surface to be polished having high flatness even if the surface to be polished is made of a plurality of substances, and further capable of suppressing metal residue and scratches after polishing; and to provide a method of performing CMP (chemical mechanical polishing) using the same, in the polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. <P>SOLUTION: The polishing slurry contains: one of a surfactant and an organic solvent; a metal oxide-dissolving agent; and water, wherein the polishing slurry is used for polishing the surface to be polished that has at least a conductive substance and an insulating film on a surface thereof. The metal oxide-dissolving agent contains at least one selected from organic acid, organic ester, an organic acid ammonium salt, and sulfuric acid. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
