METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE MANUFACTURED BY THE SAME

摘要

A method for manufacturing a TFT substrate and the TFT substrate manufactured by the same are provided to form a common electrode after forming a gate electrode and a semiconductor pattern group, thereby preventing the common electrode from being resolved by a high temperature and turned into milk-white. A method for manufacturing a TFT(Thin Film Transistor) substrate comprises the following steps of: forming a gate electrode on a substrate; forming a semiconductor pattern group including a gate insulating film for covering the gate electrode, a first semiconductor layer on the gate insulating film, and a second semiconductor layer on the first semiconductor layer(S2); forming a common electrode in parallel with the gate electrode on the substrate(S3); forming a source electrode and a drain electrode on the second semiconductor layer(S4); forming a protection film for covering the common electrode, the source and drain electrodes and forming a contact hole for penetrating the protection film(S5); and forming a pixel electrode connection to the drain electrode which is exposed through the contact hole(S6).