| 摘要 |
A method for depositing a dielectric layer using a high density plasma deposition apparatus is provided to form uniformly a thickness of an insulating layer by adding deposition processes and etch processes to a last step of a chamber cleaning process. A dielectric layer deposition method includes a process for depositing an insulating layer having a desired thickness by performing repeatedly a deposition process and an etch process, and a process for removing a contaminant source from a chamber by performing a chamber cleaning process. The chamber cleaning process includes additional deposition processes and additional etch processes. In the chamber cleaning process, an insulating layer is deposited by performing repeatedly the deposition processes and the etch processes.
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