发明名称 FILM-FORMING COMPOSITION
摘要 <p>Disclosed is a film-forming composition to be used in a coating diffusion method, which enables to diffuse an impurity of higher concentration into a silicon wafer, while forming a silica coating film at the same time. Specifically disclosed is a film-forming composition for forming a diffusion film on a silicon wafer for diffusing an impurity element into the silicon wafer. This film-forming composition contains (A) a high molecular weight silicon compound, (B) an oxide of the impurity element or a salt containing the element, and (C) a porogen.</p>
申请公布号 WO2008007576(A1) 申请公布日期 2008.01.17
申请号 WO2007JP63251 申请日期 2007.07.02
申请人 TOKYO OHKA KOGYO CO., LTD.;MORITA, TOSHIRO 发明人 MORITA, TOSHIRO
分类号 H01L21/225;C09D171/02;C09D183/00;H01L21/312 主分类号 H01L21/225
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