METHOD OF FORMING TaSiN FILM

摘要

A substrate is disposed in a treating vessel. An organic Ta compound gas having a Ta=N bond, an Si-containing gas, and an N-containing gas are introduced into the treating vessel to form a TaSiN film by CVD. In this film formation, at least one of the partial pressure of the Si-containing gas in the treating vessel, total pressure in the treating vessel, film formation temperature, and partial pressure of the N-containing gas is controlled to thereby regulate the Si concentration in the film. Especially when SiH<SUB>4</SUB> gas is used as the Si-containing gas, the partial SiH<SUB>4</SUB> gas pressure is determined based on the fact that the desired Si concentration in the film under given processing conditions can be expressed as a linear function involving the logarithm of the partial pressure of SiH<SUB>4</SUB> gas.