| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a flip-chip mounting semiconductor light-emitting device which can emit blue or ultraviolet light with high power and high efficiency, and has a high luminance uniformity at a light extracting surface. <P>SOLUTION: The method of manufacturing the light-emitting device includes: (a) a step of forming a buffer layer, a light uniforming layer, and a thin-film crystal layer; (c) a step of forming a second conductive side electrode; (d) a step of exposing one part of a first conductive semiconductor layer; (e) a step of forming an inter-apparatus separating trenches by executing etching from a surface to (i) one part of the light uniforming layer, (ii) one part of the buffer layer, or (iii) the substrate; (f) a step of forming an insulating layer on the overall surface; (g) a step of removing the insulating layer of a trench center region of the substrate surface in the inter-apparatus separating trenches; (h) a step of forming a first current injection region on the surface of the first conductive semiconductor layer; (i) a step of exposing one part of the second conductive side electrode on the surface of the second conductive side electrode; and (j) a step of forming a first conductive side electrode so as to contact the first current injection region. <P>COPYRIGHT: (C)2008,JPO&INPIT |
