| 摘要 |
A method and circuitry for checking the programming (P) and deletion (L) operations of memory cells ( 5 ) in a nonvolatile memory device ( 1 ). Parallel to the programming (P) or deletion (L) operations of the actual memory cells ( 5 ) the respective programming or deletion process is carried out on at least one similar checking cell ( 4.1, 4.2, 4.3 ), with the programming (P) or deletion (L) operations being less favorable by a defined extent than the programming (P) or deletion (L) operations of the actual memory cells ( 5 ). From the content of the checking cell ( 4.1, 4.2, 4.3 ) an evaluation device ( 6 ) determines whether the programming (P) or deletion (L) operation was successful or not, and a corresponding output signal (ak) indicative thereof is produced.
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