| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing method capable of improving polishing processing efficiency by continuously polishing a conductor film and a barrier metal film on the same polishing table. <P>SOLUTION: The chemical mechanical polishing method is used to polish a workpiece having a barrier metal film and a conductor film provided on the barrier metal film in a process of manufacturing a semiconductor device. In this method, a first polishing process in which a polishing solution A is used to polish the conductor film, and a second polishing process in which a polishing solution B is used to polish the barrier metal film are continuously executed on the same polishing table having a polishing pad arranged thereon, and the polishing solutions A and B each contain components such as (1) particles having a primary grain size of 20-50 nm and degree of association of 2-5, (2) an organic acid and (3) an oxidizing agent. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
