NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device, especially the non-volatile semiconductor memory device which provides a non-volatile memory function wherein writing and erasing are repeated by a buried semiconductor device. SOLUTION: This device comprises: a semiconductor substrate; an element isolation region which separates a first active region and a second active region formed on the semiconductor substrate; a transistor electrode which is formed in the first active region with a first insulating film as a medium; a first capacitor electrode which is formed in the first active region with a second insulating film as a medium; and a second capacitor electrode which is formed in the second active region with a third insulating film as a medium and electrically connected to the transistor electrode and the first capacitor electrode. COPYRIGHT: (C)2007,JPO&INPIT