| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide high energy conversion efficiency and high open circuit voltage by enhancing crystalline of a power generation layer and making electron transfer smooth. <P>SOLUTION: A photoelectric conversion device 1 has a first glass substrate 11a, and an anode side transparent electrode layer 12 is formed in the first glass substrate 11a. A porous semiconductor crystalline layer 13 formed as a columnar crystalline structure in which a semiconductor crystal is grown in the vertical direction to the substrate plane from the anode side transparent electrode layer 12 is formed in the anode side transparent electrode layer 12. The semiconductor crystal layer 13 is formed by spattering on the anode side transparent electrode layer 12, and during deposition, the temperature of the anode side transparent electrode layer 12 which is a deposition target is lowered than the temperature of the initial stage of deposition. During deposition, reaction gas flow rate is varied between 1/750 and 1/250 of spattering gas flow rate, and the pressure in deposition atmosphere is varied between 2.66×10<SP>2</SP>Pa and 1.33×10<SP>2</SP>Pa. <P>COPYRIGHT: (C)2007,JPO&INPIT |
