| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lithographic apparatus and a device manufacturing method that compensates for reticle induced CDU. <P>SOLUTION: The lithographic apparatus is operable in a substrate exposing configuration to expose a substrate W with a pattern of radiation and a radiation beam inspection configuration in which the pattern of radiation that would be exposed on the substrate W if the lithographic apparatus was in the substrate exposing configuration is inspected by a radiation beam inspection device 10. In the radiation beam inspecting configuration, the operation of the lithographic apparatus is modified in order to minimize the difference between the pattern of radiation exposed on the substrate W and the required pattern of radiation to be exposed on the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
