| 摘要 |
A semiconductor device is formed by performing an amorphizing ion implantation to implant dopants of a first conductivity type into a semiconductor body. The first ion implantation causes a defect area (e.g., end-of-range defects) within the semiconductor body at a depth. A non-amorphizing implantation implants dopants of the same conductivity type into the semiconductor body. This ion implantation step implants dopants throughout the defect area. The dopants can then be activated by heating the semiconductor body for less than 10 ms, e.g., using a flash anneal or a laser anneal.
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