METHOD FOR MANUFACTURING OF CMOS IMAGE SENSOR

摘要

A method for manufacturing a CMOS image sensor is provided to improve sensitivity of the CMOS image sensor by focusing a light on a light receiving unit without damage of the light that does not pass through a micro lens. An interlayer dielectric(32) is formed on a semiconductor substrate where plural photo diodes(31). Plural color filter layers(34) are formed on the interlayer dielectric in a certain interval. A planarization layer(35) is formed on the whole surface of the semiconductor substrate including each color filter layer. A sacrificial resist pattern is formed on the planarization layer. A spacer(38) is formed on a sidewall of the sacrificial resist pattern. The sacrificial resist pattern is removed. A resist layer(40) is formed on the planarization layer where the spacer only remains and then the spacer is removed. The resist layer is reflowed at a predetermined temperature to form a micro lens.