发明名称 |
High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes |
摘要 |
A memory cell is described suitable for use in a high-density monolithic three dimensional memory array. In preferred embodiments of the memory cell, a semiconductor junction diode formed of germanium or a germanium alloy which can be crystallized at relatively low temperature is formed disposed between conductors. The use of a low-temperature material allows the conductors to be formed of copper or aluminum, both low-resistivity materials that provide adequate current at very small feature size, allowing for a highly dense stacked array.
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申请公布号 |
US2006249753(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20050125606 |
申请日期 |
2005.05.09 |
申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
HERNER S. B.;DUNTON SAMUEL V. |
分类号 |
H01L27/10;H01L21/82 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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