| 摘要 |
PROBLEM TO BE SOLVED: To provide the new structure of a P-type region capable of reducing a leakage current from a region having a low applied voltage in the case of a reverse bias in a JBS semiconductor device in which a Schottky barrier and a rectifying section by a pin structure are compounded. SOLUTION: P-type regions are formed in p-type semiconductor regions 4 and p-type surface layers 5, the p-type semiconductor regions 4 are formed deeply in recessed sections 3 by a trench manufacturing method, and the p-type surface layers 5 are formed shallowly among the p-type semiconductor regions 4 by a planar manufacturing method. The p-type semiconductor regions 4 and the p-type surface layers 5 are dispersed and arranged uniformly as shown in Fig. 13, Fig. 14 and Fig. 15 in planes. The p-type regions are brought into ohmic-contact with a Schottky-barrier metallic film 6 in principle, but a structure in which the p-type regions are connected only by the Schottky-barrier metallic film 6 and p-type Schottky junctions while the surface layers of the p-type semiconductor regions 4 are formed in a low concentration is also provided. COPYRIGHT: (C)2006,JPO&NCIPI |
