| 摘要 |
The invention relates to a method of manufacturing a semiconductor device ( 10 ) with a substrate ( 1 ) and a semiconductor body ( 11 ) which comprises at least one semiconductor element, wherein, after formation of the element, a layer structure is formed which comprises at least one electrically insulating layer ( 2 ) or an electrically conductive layer ( 3 ), wherein an opening is formed in the layer structure with the aid of a patterned photoresist layer ( 4 ) and an etching process, wherein residues are formed on the surface of the semiconductor body ( 11 ) during the etching process, and wherein the photoresist layer ( 4 ) is ashed, after the etching process, by means of a treatment with an oxygen-containing compound, after which the surface is subjected to a cleaning operation using a cleaning agent comprising a diluted solution of an acid in water and being heated to a temperature above room temperature, thereby causing the residues formed to be removed. According to the invention, sulphuric acid is chosen as the acid for the cleaning agent.
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