发明名称 |
Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates |
摘要 |
A memory cell ( 110 ) has a select gate ( 140 ) and at least two floating gates ( 160 ). A gate dielectric ( 150 ) for the floating gates ( 160 ) is formed by thermal oxidation simultaneously with as a dielectric on a surface of the select gate ( 140 ). The dielectric thickness on the select gate is controlled by the dopant concentration in the select gate. Other features are also provided.
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申请公布号 |
US7060565(B2) |
申请公布日期 |
2006.06.13 |
申请号 |
US20030631452 |
申请日期 |
2003.07.30 |
申请人 |
PROMOS TECHNOLOGIES INC. |
发明人 |
DING YI |
分类号 |
H01L21/336;H01L21/8239;H01L21/8247;H01L27/105 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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