| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the curvature and the crack of a substrate at the time of laser annealing to a whole substrate surface which performs a laser irradiation. SOLUTION: A method of manufacturing a semiconductor apparatus having a plurality of chip regions 2 in which a semiconductor chip is formed on a substrate 1 includes the step of forming a groove 3 having a depth of 10μm to 20μm in the substrate 1 between the plurality of the chip regions 2. After the groove 3 is formed, the laser annealing is performed by irradiating the whole surface of the substrate 1 with the laser beam 14. The width of the groove 3 is the value expressed by l×ΔT×η(l represents the length of the chip region,ΔT represents a temperature difference of the front surface and the rear surface of the substrate at the time of laser annealing, andηrepresents a line coefficient of thermal expansion of the substrate.). COPYRIGHT: (C)2006,JPO&NCIPI
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