| 摘要 |
A wiring layer structure of a resin sealed semiconductor integrated circuit, which is free from slide of wiring layer during heat cycle test, is disclosed. The slide is prevented by making an effective width of the wiring layer smaller by means of slits (S) formed in the wiring layer (208A-1,208A-2,208A-3). A reduction of area to be occupied by the wiring layer is realized by reducing a total width of the wiring layers by increasing the density of slits with increase of a distance from a corner of the chip. <IMAGE> <IMAGE> |
