| 发明名称 |
LIQUID FOR LIQUID IMMERSION EXPOSURE AND PATTERN FORMING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the formation of a pattern having a bad profile by enhancing resolution furthermore in liquid immersion lithography. <P>SOLUTION: The liquid 203 for liquid immersion exposure arranged between a resist film 202 formed on a substrate 201 and a projection lens 205 in order to enhance the value of a numerical aperture is produced by adding a carbonyl group or a sulfonyl group containing molecules having a polarity higher than that of water to a solvent. Since refractive index of the liquid 203 is increased and resolution is enhanced without imposing any burden on the projection lens 205, a resist pattern having a good profile can be attained. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006032455(A) |
申请公布日期 |
2006.02.02 |
| 申请号 |
JP20040205732 |
申请日期 |
2004.07.13 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
ENDO MASATAKA;SASAKO MASARU |
| 分类号 |
H01L21/027;G03F7/039;G03F7/20 |
主分类号 |
H01L21/027 |
| 代理机构 |
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