| 摘要 |
A nickel alloy sputtering target comprising nickel wherein 0.5 to 10 at% of tantalum is contained, and a nickel alloy sputtering target characterized in that the content of unavoidable impurities excluding gas components therein is 100 wtppm or less. The nickel alloy sputtering target would enable forming a thermally stable silicide (NiSi) film and would suppress any film cohesion and excess silicide formation. In the formation of sputtering film, the nickel alloy sputtering target would reduce particle generation and ensure satisfactory uniformity. Further, the nickel alloy sputtering target excels in plastic moldability into target and is especially useful in the manufacturing of gate electrode material (thin film). Further, there is provided a process for producing the same.
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