发明名称 FOCUS RING AND PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a focus ring and a plasma processing apparatus with which the uniformity of the processing within a semiconductor wafer surface is improved and occurrence of the deposition on the rear-surface side of the peripheral-edge part of the semiconductor wafer is reduced as compared to that by prior art. <P>SOLUTION: A loading table 2 for loading a semiconductor wafer W and a focus ring 8 that surrounds the periphery of the semiconductor wafer W loaded on the loading table 2 are provided in a vacuum chamber 1. The focus ring 8 is constituted by a ring-shaped lower member 9, composed of a dielectric and a ring-shaped upper member 10 arranged on the upper part of the lower member 9 and is composed of an electrically conductive material. The upper surface of the outer peripheral side of the upper member 10 is made to be a flat part 10a, whose position is higher than the surface to be processed of the semiconductor wafer W. The inner peripheral part of the flat part 10a is made to be a sloping part 10b that slopes, in such a way that the outer peripheral part is higher than the lower peripheral part. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005277369(A) 申请公布日期 2005.10.06
申请号 JP20040242218 申请日期 2004.08.23
申请人 TOKYO ELECTRON LTD 发明人 KOSHIISHI AKIRA;TANAKA HIDEO;OKAYAMA NOBUYUKI;MIYAGAWA MASAAKI;MIZUKAMI SHUNSUKE;SHIMIZU WATARU;HIROSE JUN;WAKAGI TOSHIKATSU;MIWA TOMONORI;OYABU ATSUSHI;HAYASHI DAISUKE
分类号 H05H1/46;H01L21/3065 主分类号 H05H1/46
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