| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, wherein a common contact is constituted at an occupancy area closer to a normal contact. SOLUTION: An n-type region 11 is formed in a p-type silicon semiconductor substrate 10. The n-type region 11 is a node required for an element structure of a semiconductor integrated circuit. An adjacent p-type region 12 is formed immediately under the n-type region 11. The p-type region 12 is a potential connection region for fixing the potential of the semiconductor substrate 10, for example. The n-type region 11 and the p-type region 12 form a vertical type junction J1 adjacent in a depth direction. A connection member 15 is passed through the n-type region 11 via an opening 14 of an insulating film 13 and its tip reaches the inside of the p-type region 12. The connection member 15 is eutectic with silicon and has a tapered shape. The connection member 15 is made of, for example, an aluminum alloy, and eutectic with silicon by generating a spiking phenomenon. COPYRIGHT: (C)2006,JPO&NCIPI |
