| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can obtain the breakdown voltage and can be made thin. SOLUTION: The semiconductor device comprises a first conductivity-type first semiconductor layer 1 having a high concentration, a second conductivity-type second semiconductor layer 2 having a concentration lower than that of the first semiconductor layer 1, the layer 2 formed on the first layer 1, a first and second semiconductor regions 3a, 3b of the second conductivity-type formed at separated from each other on the second semiconductor layer 2 surface, a first conductivity-type third semiconductor region 4 formed on the part of the surface of the first semiconductor region, a first electrode 5 connected to the third semiconductor region, and a second electrode 6 connected to the second semiconductor region. At operating, the main current, running through the first semiconductor layer 1 in the thickness direction, does not flow. COPYRIGHT: (C)2005,JPO&NCIPI
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