发明名称 METHOD OF FABRICATING ORGANIC FIELD EFFECT TRANSISTORS
摘要 Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film (202) that has an electrically conducting layer (204, 206) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (214), and a polymer film (223) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure (225) or an adhesive layer (228). A source electrode and a drain electrode (236) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor (247) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.
申请公布号 WO2004061906(A3) 申请公布日期 2005.06.23
申请号 WO2003US40469 申请日期 2003.12.18
申请人 MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE 发明人 ZHANG, JIE,;GAMOTA, DANIEL,;ZHANG, MIN-XIAN,;BRAZIS, PAUL,;KALYANASUNDARAM, KRISHNA,
分类号 H01L51/00;H01L51/30;H01L51/40 主分类号 H01L51/00
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