发明名称 Preparation of largely HBr-free HCI gas and largely HBr-free aqueous HCI solution
摘要 The present invention relates to a process for preparing largely HBr-free HCl gas and largely HBr-free aqueous HCl solution, which comprises the following steps: a) providing HBr-containing HCl gas; b) passing the HBr-containing HCl gas through aqueous HCl solution saturated with HCl; c) separating off HBr-containing aqueous HCl solution saturated with HCl; d) if desired, passing the largely HBr-free HCl gas obtained in step b) into water to obtain largely HBr-free aqueous HCl solution; with largely HBr-free aqueous HCl solution produced in step d) being able, if desired, to be recirculated to step b) of the process. The process of the present invention allows high-purity aqueous HCl solution for use in the semiconductor industry to be prepared inexpensively and on an industrial scale. However, the purified HCl gas obtained by means of steps a) to c) can also be used for any other purposes. The invention likewise provides an apparatus for carrying out the process of the present invention.
申请公布号 US6890508(B2) 申请公布日期 2005.05.10
申请号 US20020309128 申请日期 2002.12.04
申请人 BASF AKTIENGESELLSCHAFT 发明人 SCHLAEFER DIETER;GUTH JOSEF;SCHLIMPER HANS-ULRICH
分类号 B01D53/14;B01D53/18;C01B7/01;C01B7/07;(IPC1-7):C01B7/07 主分类号 B01D53/14
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