| 摘要 |
An improved method of forming a semiconductor device is described. Initially, a structure is formed that includes first and second hard masking layers that cover a dielectric layer. A first part of the second hard masking layer and a first part of the first hard masking layer are etched to form an etched region within the hard mask that exposes a first portion of the dielectric layer. That etched region is filled with a sacrificial material. After etching through a second part of the second hard masking layer, the remainder of the sacrificial material is removed prior to subsequent processing.
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