GaN-BASED LED AND METHOD FOR MANUFACTURING THE SAME USING ETCHING TECHNIQUE FOR SAPPHIRE TO REDUCE SIZE OF DEVICE

摘要

PURPOSE: A GaN-based LED and a method for manufacturing the same using an etching technique for sapphire is provided to reduce the size of a device and to increase the thickness of a basic substrate. CONSTITUTION: A GaN-based LED includes a sapphire basic substrate(20), a first conductive contact layer(12), a first electrode(18), a first clad layer(13), a light emitting layer(14), a second clad layer(15), a second conductive contact layer(16) and a second electrode(19). The first electrode is connected with the first conductive contact layer. The second electrode is formed on the second conductive contact layer. The sapphire basic substrate has a champer in the corner portion thereof.